High Power Rectifier Diode, 300/500/800/1000 Amp

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$68.74

High power rectifier diodes have multiple current specifications of 300A, 500A, 800A, and 1000A, suitable for industrial and traction applications. Its storage temperature range is -40℃ to 160℃. The use of high-quality silicon materials and concave design enhance heat dissipation performance, which can meet heavy load and high-power transmission requirements.

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SKU: ATO-RF-ZP

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Overview

Silicon rectifier diode adopts a bolt installation design and is widely used in various fields, including high-power converters, welding equipment, motor control and drive, charging equipment, electroplating, and industrial and traction high-power transmission devices.

Features

High-power rectifier diode features a diffusion junction structure, providing excellent electrical performance.
It has a fully enclosed ceramic-metal flat plate structure, ensuring reliability and durability.
This rectifier diode is capable of withstanding high surge currents, making it suitable for various harsh operating conditions.
Silicon rectifier diode complies with the GB4939-1985 standard, ensuring product quality and safety.
The dual-side cooling design effectively enhances heat dissipation, prolonging the lifespan of the diode.

Specification

Model	ATO-ZP300A	ATO-ZP500A	ATO-ZP800A	ATO-ZP1000A
Average forward current	300A	500A	800A	1000A
Reverse repetitive peak voltage	200~3000V	200~3000V	200~3000V	200~3000V
Reverse repetitive peak current	≤15mA	≤15mA	≤20mA	≤25mA
Forward average voltage/output current	1.8V/600A	1.8V/1500A	2.2V/2400A	2.0V/3000A
Thermal impedance (shell to radiator)	0.065℃/W	0.040℃/W	0.022℃/W	0.022℃/W
Maximum rated junction temperature	150℃	150℃	150℃	150℃
Mounting force	5.3~10KN	10~20KN	19~26KN	19~26KN
Storage temperature	-40~160℃	-40~160℃	-40~160℃	-40~160℃
Weight (approximately)	85g	110g	200g	270g

Dimension (mm)

High power rectifier diode dimension

Tips: Working principle of a rectifier diode

The working principle of a rectifier diode is based on the properties of semiconductor materials. It consists of two different types of semiconductor materials (N-type and P-type), which form a PN junction at their interface. When the anode (P-type) is connected to a positive voltage and the cathode (N-type) to a negative voltage, the PN junction becomes forward-biased, allowing current to flow through the diode. In this state, the diode has low resistance, enabling smooth current conduction.

Conversely, when the anode is connected to a negative voltage and the cathode to a positive voltage, the PN junction is reverse-biased, and the diode enters a cutoff state, preventing current from flowing. In this state, the diode presents high resistance, effectively blocking current. Rectifier diodes are widely used in converting alternating current (AC) to direct current (DC) in power supply applications, allowing current to flow in only one direction and thereby achieving rectification. By connecting multiple diodes, bridge rectifier circuits can be constructed to enhance rectification efficiency.

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